參數(shù)資料
型號(hào)： RFD7N10LESM
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs
中文描述： 7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 361K
代理商： RFD7N10LESM
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD7N10LE,
RFD7N10LESM
100
100
+10, -8
UNITS
V
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Drain Current
Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
7
Refer to Peak Current Curve
Refer to UIS Curve
47
0.318
-55 to 175
A
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= 95V, V
GS
= 0V
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
V
GS
= +10, -8V
I
D
= 7A, V
GS
= 5V
V
DD
= 50V, I
D
= 7A
R
L
= 7.1
, V
GS
= 5V
R
GS
= 2.5
100
-
-
V
Gate Threshold Voltage
1
-
3
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
10
μ
A
On Resistance
-
-
0.300
Turn-On Time
-
-
110
ns
Turn-On Delay Time
-
10
-
ns
Rise Time
-
65
-
ns
Turn-Off Delay Time
-
23
-
ns
Fall Time
-
18
-
ns
Turn-Off Time
-
-
60
ns
Total Gate Charge
V
GS
= 0 to 10V
V
GS
= 0 to 5V
V
GS
= 0 to 1V
V
DS
= 25V, V
GS
= 0V
f = 1MHz
V
DD
= 80V
I
D
= 7A,
R
L
= 11.4
-
125
150
nC
Gate Charge at 5V
-
67
80
nC
Threshold Gate Charge
-
3.7
4.5
nC
Input Capacitance
-
360
-
pF
Output Capacitance
-
70
-
pF
Reverse Transfer Capacitance
-
20
-
pF
Thermal Resistance Junction to Case
-
-
3.15
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-251 and TO-252 Package
-
-
100
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 7A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 7A, dI
SD
/dt = 100A/
μ
s
-
-
130
ns
RFD7N10LE, RFD7N10LESM
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