參數(shù)資料
型號： RFD7N10LESM
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs
中文描述： 7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 3/7頁
文件大?。?/td> 361K
代理商： RFD7N10LESM
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
8
4
2
0
25
50
75
100
125
150
175
6
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
Z
θ
J
N
T
0.01
0.1
1
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
X Z
θ
JC
X R
θ
JC
+ T
C
P
DM
t
1
t
2
0.01
0.5
0.2
0.1
0.05
0.02
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
200
I
D
,
0.1
1
20
14
10
100
μ
s
1ms
10ms
V
DSS
MAX = 100V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
V
GS
= 5V
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
(
)
175 - T
C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
t, PULSE WIDTH (ms)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
I
D
,
20
10
5
14
RFD7N10LE, RFD7N10LESM
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