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參數(shù)資料
| 型號(hào)： | RFD3055LESM |
| 廠(chǎng)商： | INTERSIL CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 11 A, 60 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 82K |
| 代理商： | RFD3055LESM |
4-438
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
50
10
1
0.001
0.01
0.1
1
t
AV,
TIME IN AVALANCHE (ms)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
A
,
24
18
12
6
0
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
4.5
6.0
7.5
I
D
,
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
25
o
C
175
o
C
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
24
18
12
6
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-55
o
C
V
DS
= 15V
2.5
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
V
GS
= 10V, I
D
= 12A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
B
RFD3055, RFD3055SM, RFP3055
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD3055SM | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
| RFD3055LESM9A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA |
| RFD3055 | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD3055SM | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
| RFP3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD3055LESM_Q | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD3055LESM9A | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD3055LESM9A_R4383 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD3055LESM9A_SB82064 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD3055LESM9AS2478 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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