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參數(shù)資料
| 型號： | RFD3055LESM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 11 A, 60 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | RFD3055LESM |
4-437
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
P
T
C
, CASE TEMPERATURE (
o
C)
10
8
6
4
2
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
12
14
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
0.01
0.02
0.05
0.1
0.2
0.5
T
Z
θ
J
N
P
DM
t
1
t
2
SINGLE PULSE
50
10
1
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1ms
100
μ
s
10ms
DC
I
D
,
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
100
t, PULSE WIDTH (ms)
V
GS
= 20V
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
*
175
---------------------
–
=
I
D
,
200
T
C
= 25
o
C
RFD3055, RFD3055SM, RFP3055
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD3055SM | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
| RFD3055LESM9A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA |
| RFD3055 | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD3055SM | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
| RFP3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD3055LESM_Q | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD3055LESM9A | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD3055LESM9A_R4383 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD3055LESM9A_SB82064 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD3055LESM9AS2478 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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