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參數(shù)資料
| 型號： | RFD16N06LE |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 16 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 342K |
| 代理商： | RFD16N06LE |
4
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
3.0
4.5
6.0
7.5
1.5
0
20
40
60
D
,
-55
o
C
80
100
175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
V
GS
= 5V, I
D
= 16A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
O
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0
0.5
1.0
1.5
2.0
T
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
2000
1500
500
00
5
10
15
20
25
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
RSS
1000
C
ISS
C
OSS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
60
45
30
15
0
20
)
)
---------------------
t, TIME (
μ
s)
80
)
)
---------------------
5.00
3.75
2.50
1.25
0
V
D
,
V
G
,
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 3.75
I
G(REF)
= 0.65mA
V
GS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
RFD16N06LE, RFD16N06LESM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM9A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-252AA |
| RFD3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
| RFP3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD16N06LESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W ;RoHS Compliant: Yes |
| RFD16N06LESM9A | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N06SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-251AA |
| RFD16N10SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-252AA |
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