參數(shù)資料
型號(hào)： RFD16N06LE
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述： 16 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 342K
代理商： RFD16N06LE
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD16N06LE, RFD16N06LESM
60
60
+10, -8
16
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V, Figure 11
V
GS
= V
DS
, I
D
= 250
μ
A, Figure 10
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
1
-
3
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= +10, -8V
-
-
10
μ
A
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 16A, V
GS
= 5V
V
DD
= 30V, I
D
= 16A, R
L
= 1.88
,
V
GS
= 5V, R
GS
= 5
Figures 16, 17
-
-
0.047
Turn-On Time
t
ON
-
-
100
ns
Turn-On Delay Time
t
d(ON)
-
11
-
ns
Rise Time
t
r
-
60
-
ns
Turn-Off Delay Time
t
d(OFF)
-
48
-
ns
Fall Time
t
f
-
35
-
ns
Turn-Off Time
t
OFF
-
-
115
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 48V,
I
D
= 16A, R
L
= 3
Figures 18, 19
-
51
62
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
29
35
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
1.8
2.6
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Figure 12
-
1350
-
pF
Output Capacitance
C
OSS
-
300
-
pF
Reverse Transfer Capacitance
C
RSS
-
90
-
pF
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
1.65
o
C/W
Thermal Resistance Junction to Ambient
TO-251AA, TO-252AA
-
-
80
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 16A
I
SD
= 16A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
-
-
125
ns
NOTES:
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.
RFD16N06LE, RFD16N06LESM
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD16N06LESM 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W ;RoHS Compliant: Yes
RFD16N06LESM9A 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD16N06SM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-251AA
RFD16N10SM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-252AA
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