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參數(shù)資料
| 型號： | RFD16N06LE |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 16 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 342K |
| 代理商： | RFD16N06LE |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 6. SATURATION CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
20
10
5
0
25
50
75
100
125
150
175
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
I
D
D
1
10
200
100
1ms
V
DSS
MAX = 60V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
μ
s
10ms
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
I
D
,
500
100
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
(
)
175 - T
C
150
V
GS
= 10V
T
C
= 25
o
C
t
AV
, TIME IN AVALANCHE (ms)
0.01
0.1
1
10
I
A
,
1
10
100
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
20
40
60
0
1.5
3.0
4.5
6.0
7.5
V
GS
= 3V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 5V
80
100
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
T
C
=25
o
C
RFD16N06LE, RFD16N06LESM
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| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM | 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N06LESM9A | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-252AA |
| RFD3055 | 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD16N06LESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:60V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W ;RoHS Compliant: Yes |
| RFD16N06LESM9A | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N06SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-251AA |
| RFD16N10SM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 16A I(D) | TO-252AA |
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