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參數資料
| 型號： | RFD16N05LSM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場效應管) |
| 中文描述： | 16 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數： | 3/6頁 |
| 文件大小： | 47K |
| 代理商： | RFD16N05LSM |
6-165
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA
(SINGLE PULSE UIS SOA)
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
0
25
50
75
100
150
5
10
20
125
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
10
2
1
I
D
,
10
2
10
DC
1
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
I
D
MAX CONTINUOUS
T
C
= 25
o
C
T
J
= MAX RATED
10
10
2
1
0.01
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
1
10
0.10
t
AV
= (L)(I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3 RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
Idm
0
15
30
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
4.5
7.5
45
I
D
,
V
GS
= 2V
V
GS
= 3V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
V
GS
= 5V
V
GS
= 4V
6.0
T
C
= 25
o
C
0
3.0
4.5
6.0
1.5
0
15
30
45
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
= 15V
RFD16N05L, RFD16N05LSM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| RFD16N05LSM | 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK |
| RFD16N05LSM_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD16N05LSM_Q | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N05LSM9A | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N05NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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