參數(shù)資料
型號： RFD16N05LSM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場效應(yīng)管)
中文描述： 16 A, 50 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 2/6頁
文件大?。?/td> 47K
代理商： RFD16N05LSM
6-164
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD16N05L,
RFD16N05LSM
50
50
16
45
±
10
60
0.48
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250mA, V
GS
= 0V, Figure 10
50
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250mA, Figure 9
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40V, V
GS
= 0V
T
C
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V, V
DS
= 0V
-
-
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 16A, V
GS
= 5V
-
-
0.047
I
D
= 16A, V
GS
= 4V
-
-
0.056
Turn-On Time
t
(ON)
V
DD
= 25V, I
D
= 8A,
V
GS =
5V, R
GS
= 12.5
Figures 15, 16
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
14
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
42
-
ns
Fall Time
t
f
-
14
-
ns
Turn-Off Time
t
(OFF)
-
-
100
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 40V,
I
D
= 16A,
R
L
= 2.5
Figures 17, 18
-
-
80
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
-
45
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
-
3
nC
Thermal Resistance Junction to Case
R
θ
JC
-
-
2.083
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
100
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 16A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 16A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.
RFD16N05L, RFD16N05LSM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD16N05LSM 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK
RFD16N05LSM_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
RFD16N05LSM_Q 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD16N05LSM9A 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD16N05NL 制造商:Rochester Electronics LLC 功能描述:- Bulk
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