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參數(shù)資料
| 型號(hào)： | RFD16N03LSM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 16 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | RFD16N03LSM |
6-159
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0.01
0.1
10
10
0.001
200
1
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
=(L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
t
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
100
1
100
0
25
0
1.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2.0
3.0
5.0
50
75
I
D
,
V
GS
= 4V
V
GS
= 10V
100
4.0
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 3.5V
PULSE DURATION = 250
μ
s, T
C
= 25
o
C
V
GS
= 3V
0
3.0
4.5
6.0
7.5
1.5
0
25
50
75
175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
100
25
o
C
V
DD
= 15V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
25
50
75
2.5
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
r
D
,
4.0
100
I
D
= 16A
I
D
= 8A
I
D
= 32A
I
D
= 2A
4.5
5.0
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
)
0
50
100
150
200
0
10
20
30
40
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
250
t
r
t
f
t
d(ON)
t
d(OFF)
V
DD
= 15V, I
DD
= 16A, R
L
= 0.93
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
200
I
D
= 16A
V
GS
= 5V,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
O
RFD16N03L, RFD16N03LSM
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