參數(shù)資料
型號(hào)： RFD16N03LSM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場效應(yīng)管)
中文描述： 16 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 107K
代理商： RFD16N03LSM
6-157
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD16N03L, RFD16N03LSM
30
30
±
10
16
Refer to Peak Current Curve
Figures 6, 16, 17
90
0.606
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
LC-
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 13)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 12)
V
DS
= 30V,
V
GS
= 0V
30
-
-
V
Gate Threshold Voltage
1
-
2
V
Zero Gate Voltage Drain Current
T
C
= 25
o
C
T
C
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
V
GS
=
±
10V
I
D
= 16A, V
GS
= 5V (Figure 11)
V
DD
= 15V, I
D
≈
16A,
R
L
= 0.93
, V
GS
= 5V,
R
GS
= 5
(Figures 18, 19)
-
-
±
100
nA
Drain to Source On Resistance
-
-
0.025
Turn-On Time
-
-
120
ns
Turn-On Delay Time
-
15
-
ns
Rise Time
-
95
-
ns
Turn-Off Delay Time
-
25
-
ns
Fall Time
-
27
-
ns
Turn-Off Time
-
-
80
ns
Total Gate Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 24V,
I
D
= 16A,
R
L
= 1.5
I
G(REF)
= 0.6mA
(Figures 15, 20, 21
-
50
60
nC
Gate Charge at 5V
-
30
36
nC
Threshold Gate Charge
-
1.5
1.8
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 14)
-
1650
-
pF
Output Capacitance
-
575
-
pF
Reverse Transfer Capacitance
-
200
-
pF
Thermal Resistance, Junction to Case
Figure 3
-
-
1.65
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
TO-251 and TO-252
-
-
100
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 16A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 16A, dI
SD
/dt = 100A/
μ
s
-
-
75
ns
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFD16N03L, RFD16N03LSM
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