參數(shù)資料
型號(hào)： RFD16N03LSM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 16 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 3/8頁
文件大?。?/td> 107K
代理商： RFD16N03LSM
6-158
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
10
5
0
25
50
75
100
125
150
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
20
175
15
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
0
P
DM
t
1
t
2
0.01
0.02
0.05
0.1
0.2
0.5
t
1
, RECTANGULAR PULSE DURATION (s)
10
1
Z
θ
J
,
T
10
-3
10
-2
10
-1
1
10
-5
10
-4
2
0.01
0.1
SINGLE PULSE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
50
1
500
10
1
I
D
,
DC
100
μ
s
1ms
10ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
V
DSS
MAX = 30V
100ms
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
D
,
500
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
V
GS
= 5V
T
C
= 25
o
C
RFD16N03L, RFD16N03LSM
相關(guān)PDF資料
PDF描述
RFD16N05L 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管)
RFD16N05LSM 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管)
RFD16N06LE 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N06LESM 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N06LESM 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD16N03LSM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N03LSM9AR4610 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N05 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD16N05 制造商:Intersil Corporation 功能描述:MOSFET N I-PAK
RFD16N05_03 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*