- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374586 > RFD15P06SM (HARRIS SEMICONDUCTOR) 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | RFD15P06SM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場效應(yīng)管) |
| 中文描述： | 15 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 87K |
| 代理商： | RFD15P06SM |
4-107
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1400
1000
800
400
0
0
-5
-10
-15
-20
-25
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
200
600
1200
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
-60
-45
-30
-15
0
-10
-7.5
-5
-2.5
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 3.33
I
G(REF)
= 0.65mA
V
GS
= -10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
D
,
V
G
,
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
t
ON
10%
0
RFD15P06, RFD15P06SM, RFP15P06
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD15P06 | 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場效應(yīng)管) |
| RFD16N02L | 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
| RFD16N02LSM | 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
| RFD16N03L | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場效應(yīng)管) |
| RFD16N03LSM | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD-1604-2I | 制造商:RF Industries 功能描述:RF COAXIAL CABLE MOUNT CONNECTOR |
| RFD-1604-2L2 | 制造商:RF Industries 功能描述:RF COAXIAL CABLE MOUNT CONNECTOR |
| RFD-1605-2-C | 制造商:RF Industries 功能描述:RF COAXIAL CABLE MOUNT CONNECTOR |
| RFD-1605-2-C1 | 制造商:RF Industries 功能描述:RF COAXIAL CABLE MOUNT CONNECTOR |
| RFD-1605-2-E | 制造商:RF Industries 功能描述:RF COAXIAL CABLE MOUNT CONNECTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。