參數(shù)資料
型號(hào)： RFD15P06SM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 15 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 87K
代理商： RFD15P06SM
4-104
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
RFD15P06, RFD15P06SM, RFP15P06
-60
-60
15
Refer to Peak Current Curve
±
20
Refer to UIS Curve
80
0.533
-55 to 175
UNITS
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Figure 5) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T
pkg
V
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
V
GS
=
±
20V
I
D
≈
15A, V
GS
= -10V, (Figure 9)
V
DD
= -30V, I
D
= 7.5A
R
L
= 4.0
, V
GS
= -10V
R
G
= 12.5
(Figure 13)
-60
-
-
V
Gate to Source Threshold Voltage
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
-
-
-1
μ
A
μ
A
-
-
-25
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
-
0.150
W
Turn-On Time
-
-
60
ns
Turn-On Delay Time
-
16
-
ns
Rise Time
-
30
-
ns
Turn-Off Delay Time
-
50
-
ns
Fall Time
-
20
-
ns
Turn-Off Time
-
-
100
ns
Total Gate Charge
V
GS
= 0V to -20V
V
GS
= 0V to -10V
V
GS
= 0V to -2V
V
DS
= -25V, V
GS
= 0V
f = 1MHz
(Figure 12)
V
DD
= -48V, I
D
= 15A,
R
L
= 3.20
I
G(REF)
= 0.65mA
-
-
150
nC
Gate Charge at -10V
-
-
75
nC
Threshold Gate Charge
-
-
3.5
nC
Input Capacitance
-
1150
-
pF
Output Capacitance
-
300
-
pF
Reverse Transfer Capacitance
-
56
-
pF
Thermal Resistance Junction to Case
TO-220AB, TO-251AA, TO-252AA
-
-
1.875
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-251AA, TO-252AA
-
-
100
TO-220AB
-
-
62
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Notte 2)
V
SD
I
SD
= -15A
-
-
-1.5
V
Reverse Recovery Time
t
rr
I
SD
= -15A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
NOTES:
2. Pulsed: pulse duration
≤
300ms Max, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFD15P06, RFD15P06SM, RFP15P06
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