參數(shù)資料
型號： RFD10P03L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET
中文描述： 10 A, 30 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 9/12頁
文件大小： 272K
代理商： RFD10P03L
9
RFD10P03L, RFD10P03LSM, RFP10P03L
TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
LEAD NO. 1
-
GATE
LEAD NO. 2
-
DRAIN
LEAD NO. 3
-
SOURCE
TERM. 4
-
DRAIN
E
P
Q
D
H
1
E
1
L
L
1
60
o
b
1
b
1
2
e
3
e
1
A
c
J
1
45
o
D
1
A
1
TERM. 4
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.170
0.180
4.32
4.57
-
A
1
b
0.048
0.052
1.22
1.32
-
0.030
0.034
0.77
0.86
3, 4
b
1
c
0.045
0.055
1.15
1.39
2, 3
0.014
0.019
0.36
0.48
2, 3, 4
D
0.590
0.610
14.99
15.49
-
D
1
E
-
0.160
-
4.06
-
0.395
0.410
10.04
10.41
-
E
1
e
-
0.030
-
0.76
-
0.100 TYP
2.54 TYP
5
e
1
H
1
J
1
L
0.200 BSC
5.08 BSC
5
0.235
0.255
5.97
6.47
-
0.110
2.54
2.79
6
0.530
0.550
13.47
13.97
-
L
1
P
0.130
0.150
3.31
3.81
2
0.149
0.153
3.79
3.88
-
Q
0.102
0.112
2.60
2.84
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Lead dimension and finish uncontrolled in L
1
.
3. Lead dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder coating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bot-
tom of dimension D.
7. Controlling dimension: Inch.
8. Revision 1 dated 1-93.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD10P03LSM 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD10P03LSM9A 制造商:HARRIS 制造商全稱:HARRIS 功能描述:10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET
RFD12N06RLE 功能描述:MOSFET 60V/12a/0.135Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD12N06RLE 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC I-PAK
RFD12N06RLESM 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:49W ;RoHS Compliant: Yes
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