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參數(shù)資料
| 型號(hào)： | RFD10P03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET |
| 中文描述： | 10 A, 30 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大?。?/td> | 272K |
| 代理商： | RFD10P03L |
12
All Harris Semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call
1-800-4-HARRIS
NORTH AMERICA
Harris Semiconductor
P. O. Box 883, Mail Stop 53-210
Melbourne, FL 32902
TEL: 1-800-442-7747
(407) 729-4984
FAX: (407) 729-5321
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Mercure Center
100, Rue de la Fusee
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TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Harris Semiconductor PTE Ltd.
No. 1 Tannery Road
Cencon 1, #09-01
Singapore 1334
TEL: (65) 748-4200
FAX: (65) 748-0400
S E M I C O N D U C T O R
TO-252AA
16mm TAPE AND REEL
330mm
50mm
13mm
22.4mm
16.4mm
2.0mm
4.0mm
1.75mm
1.5mm
DIA. HOLE
C
COVER TAPE
USER DIRECTION OF FEED
8.0mm
16mm
GENERAL INFORMATION
1. USE "9A" SUFFIX ON PART NUMBER.
2. 2500 PIECES PER REEL.
3. ORDER IN MULTIPLES OF FULL REELS ONLY.
4. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
Revision 6 dated 10-96
RFD10P03L, RFD10P03LSM, RFP10P03L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD12N06RLESM | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFD12N06RLE | 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| RFD12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| RFD12N06RLESM | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| RFP12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD10P03LSM | 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD10P03LSM9A | 制造商:HARRIS 制造商全稱:HARRIS 功能描述:10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET |
| RFD12N06RLE | 功能描述:MOSFET 60V/12a/0.135Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD12N06RLE | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC I-PAK |
| RFD12N06RLESM | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:49W ;RoHS Compliant: Yes |
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