- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374585 > RF3808S (International Rectifier) Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) PDF資料下載
參數(shù)資料
| 型號(hào)： | RF3808S |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 75V的，的Rds（on）\u003d 0.007ohm，身份證\u003d 106A章） |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 161K |
| 代理商： | RF3808S |
IRF3808S/IRF3808L
8
www.irf.com
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
[ ] ***
V
DD
[ ]
I
[ ]
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
Reverse Polarity of D.U.T for P-Channel
V
GS
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 17.
For N-channel
HEXFET
power MOSFETs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF3S49092SM | 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET |
| RF3V49092 | 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET |
| RF5176PCBA | 3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER |
| RF5176 | 3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER |
| RF6100-2 | RF Micro Devices 3V 900 MHz Linear Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF3809 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:GaAs HBT PRE-DRIVER AMPLIFIER |
| RF3809_1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:GaAs HBT PRE-DRIVER AMPLIFIER |
| RF3809PCK-410 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:GaAs HBT PRE-DRIVER AMPLIFIER |
| RF3809PCK-411 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:GaAs HBT PRE-DRIVER AMPLIFIER |
| RF3809PCK-412 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:GaAs HBT PRE-DRIVER AMPLIFIER |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。