參數(shù)資料
型號: RF3808S
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 75V的,的Rds(on)\u003d 0.007ohm,身份證\u003d 106A章)
文件頁數(shù): 5/11頁
文件大?。?/td> 161K
代理商: RF3808S
IRF3808S/IRF3808L
www.irf.com
5
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width
≤ 1
μs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 10a.
Switching Time Test Circuit
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
25
50
75
100
125
150
175
0
20
40
60
80
100
120
T , Case Temperature
( °
I
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001
0.0001
0.001
t , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
2
J
DM
thJC
C
P
t
t
DM
1
2
T
(
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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