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參數(shù)資料
| 型號： | RF340 |
| 廠商： | Intersil Corporation |
| 英文描述： | 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET |
| 中文描述： | 10A條，為400V，0.550 Ohm的N通道功率MOSFET |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | RF340 |
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
10
2
10
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
2
10
1
0.1
I
D
,
T
C
= 25
o
C
T
J
= 150
o
C
SINGLE PULSE
OPERATION IN
THIS AREA LIMITED
BY r
DS(ON)
100
μ
s
10
μ
s
1ms
10ms
DC
0
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
80
120
160
200
15
12
9
6
3
0
I
D
,
80
μ
s PULSE TEST
V
GS
= 6V
V
GS
= 10V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 5.5V
0
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
15
12
9
6
3
0
I
D
,
80
μ
s PULSE TEST
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
V
GS
= 5.5V
V
GS
= 6V
V
GS
= 10V
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
100
10
1
0.1
I
D
,
T
J
= 150
o
C
T
J
= 25
o
C
V
DS
≥
50V
80
μ
s PULSE TEST
0
10
20
30
40
50
5
4
3
2
1
0
I
D
, DRAIN CURRENT (A)
r
D
,
80
μ
s PULSE TEST
V
GS
= 20V
V
GS
= 10V
O
3.0
2.4
1.8
1.2
0.6
0
-60
0
20
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
O
I
D
= 10A
V
GS
= 10V
-40
-20
140
100
40
60
80
IRF340
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