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參數(shù)資料
| 型號(hào)： | RF340 |
| 廠商： | Intersil Corporation |
| 英文描述： | 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET |
| 中文描述： | 10A條，為400V，0.550 Ohm的N通道功率MOSFET |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | RF340 |
3
Source To Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
-
-
10
A
Pulse Source to Drain Current (Note 3)
-
-
40
A
Drain to Source Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 9.2A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 9.2A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 9.2A, dI
SD
/dt = 100A/
μ
s
-
-
2.0
V
Reverse Recovery Time
170
350
790
ns
Reverse Recovery Charge
1.6
4.0
8.2
μ
C
NOTES:
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance Curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 9.2mH, R
G
= 25
, peak I
AS
= 10A (Figures 15, 16).
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
10
8
6
4
2
0
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
10
-5
10
-4
10
-3
10
-2
0.1
1
10
1
0.1
0.01
10
-3
Z
θ
J
T
t
1
, RECTANGULAR PULSE DURATION (s)
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
2
IRF340
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