參數(shù)資料
型號： RF340
廠商： Intersil Corporation
英文描述： 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET
中文描述： 10A條，為400V，0.550 Ohm的N通道功率MOSFET
文件頁數(shù)： 2/7頁
文件大?。?/td> 55K
代理商： RF340
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF340
400
400
10
6.3
40
±
20
125
1.0
520
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain To Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain To Gate Voltage (R
GS
= 20k
)
(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate To Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain To Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 150
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
I
D
= 5.2A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
50V, I
D
= 5.2A (Figure 12)
V
DD
= 200V, I
D
≈
10A, R
G
= 9.1
, R
L
= 19.5
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature
400
-
-
V
Gate Threshold Voltage
2.0
-
4.0
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
10
-
-
A
Gate to Source Leakage Current
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
0.4
0.550
Forward Transconductance (Note 2)
5.8
8
-
S
Turn-On Delay Time
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
-
17
21
ns
Rise Time
-
27
41
ns
Turn-Off Delay Time
-
45
75
ns
Fall Time
-
20
36
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 10A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= 1.5mA (Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating Temperature
-
41
63
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
7
-
nC
Gate to Drain “Miller” Charge
-
23
-
nC
Input Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
1250
-
pF
Output Capacitance
-
300
-
pF
Reverse Transfer Capacitance
-
80
-
pF
Internal Drain Inductance
Measured between the
Contact Screw on Header
that isCloser to Source and
Gate Pins and Center of
Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 6mm (0.25in) from
Header and Source
Bonding Pad
-
12.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
1.0
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
Free Air Operation
-
-
30
L
S
L
D
G
D
S
IRF340
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