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參數(shù)資料
| 型號： | RF1S9530SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263A, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 63K |
| 代理商： | RF1S9530SM |
4-12
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
-100
-1
100
μ
s
10
μ
s
DC
1ms
100ms
-10
-1
-0.1
-1000
-10
-100
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10ms
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
I
D
,
0
-10
-20
-30
-40
-4
-8
-12
-16
-20
-50
V
GS
= -8V
V
GS
= -7V
V
GS
= -6V
V
GS
= -5V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V
V
GS
= -9V
0
-2
0
-2
-4
-6
-10
-4
-6
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-8
-8
-10
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
V
GS
= -9V
V
GS
= -10V
V
GS
= -8V
V
GS
= -7V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
-4
-6
-8
-10
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
-12
-16
I
D
,
-20
-8
-4
V
DS
≥
I
D(ON)
x r
DS(ON)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
125
o
C
25
o
C
-55
o
C
0
0.8
-10
-20
-30
-40
r
D
D
I
D
, DRAIN CURRENT (A)
-50
1.0
0
0.2
0.4
0.6
V
GS
= -10V
V
GS
= -20V
2
μ
s PULSE TEST
O
)
N
2.2
1.4
1.0
0.6
0.2
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.8
80
V
GS
= -10V, I
D
= -6.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
IRF9530, RF1S9530SM
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