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參數(shù)資料
| 型號(hào)： | RF1S9530SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263A, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 63K |
| 代理商： | RF1S9530SM |
4-11
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET
Symbol Showing the In-
tegral Reverse
P-N Junction Diode
-
-
-12
A
Pulse Source to Drain Current
(Note 2)
-
-
-48
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= -12A, V
GS
= 0V,
(Figure 13)
T
J
= 150
o
C, I
SD
= -12A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= -12A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
t
rr
-
300
-
ns
Reverse Recovery Charge
Q
RR
-
1.8
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 5.2mH, R
G
= 25
,
peak I
AS
= 12A. See Figures 15, 16.
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
-2.4
0
25
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-12.0
150
-9.6
75
125
-4.8
-7.2
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
10
10
-1
1
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ R
θ
JA
+T
C
P
DM
t
1
0.1
0.05
0.02
0.01
0.2
0.5
t
2
IRF9530, RF1S9530SM
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