參數(shù)資料
型號(hào): RF1S9530SM
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
中文描述: 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263A, 3 PIN
文件頁數(shù): 5/7頁
文件大?。?/td> 63K
代理商: RF1S9530SM
4-13
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.25
0.95
0.85
0.7540
0
T
J
, JUNCTION TEMPERATURE (
o
C)
40
80
N
B
120
160
1.05
1.15
I
D
= 250
μ
A
1000
200
00
-20
-50
C
600
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
800
400
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
C
ISS
-10
-30
-40
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
I
D
, DRAIN CURRENT (A)
g
f
,
0
-4
-8
-12
-16
1
2
3
4
5
-20
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-0.4
-1.0
-1.2
-1.6
-1.8
-0.6
-0.1
-1.0
-10
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
-100
-0.8
-1.4
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
V
G
,
0
8
16
24
40
- 5
0
- 10
- 15
42
V
DS
= -80V
I
D
= -12A
V
DS
= -50V
V
DS
= -20V
IRF9530, RF1S9530SM
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