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參數(shù)資料
| 型號： | RF1S630SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 62K |
| 代理商： | RF1S630SM |
4-205
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
10
1
I
D
,
100
100
DC
100
μ
s
10
μ
s
1ms
10ms
100ms
1
1000
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
C
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
0
20
40
60
80
4
8
12
16
20
100
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
2
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
5
4
6
I
D
,
8
4
V
GS
= 4V
10
V
GS
= 5V
V
GS
= 6V
V
GS
= 10V
V
GS
= 9V
V
GS
= 7V
V
GS
= 8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
2
5
6
7
1
0
2
6
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
4
8
25
o
C
-55
o
C
125
o
C
4
3
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
> I
D(ON)
x r
DS(ON)MAX
0
0.4
0.6
0.8
10
20
30
40
r
D
,
I
D
, DRAIN CURRENT (A)
0
0.2
V
GS
= 10V
V
GS
= 20V
2
μ
s PULSE TEST
O
N
2.2
1.4
1
0.6
0.2
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.8
80
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 5A
IRF630, RF1S630SM
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S630SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S640 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S640SM | 功能描述:MOSFET N-Ch Power MOSFET 200V/18a/0.180 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S640SM9A | 功能描述:MOSFET USE 512-FQP19N20C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S644 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-262AA |
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