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參數(shù)資料
| 型號(hào)： | RF1S630SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 62K |
| 代理商： | RF1S630SM |
4-204
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
9
A
Pulse Source to Drain Current
(Note 3)
-
-
36
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 9A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 9A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= 9A, dI
SD
/dt = 100A/
μ
s
-
-
2
V
Reverse Recovery Time
-
450
-
ns
Reverse Recovery Charge
-
3
-
μ
C
NOTES:
2. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 20V, starting T
J
= 25
o
C, L = 3.37mH, R
G
= 50
,
peak I
AS
= 9A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
G
D
S
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
4
2
0
25
50
75
100
125
150
8
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
10
6
t
1
, RECTANGULAR PULSE DURATION (s)
10
Z
θ
J
,
T
10
-3
10
-2
10
-1
1
10
-5
10
-4
1.0
0.01
0.1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
R
θ
JC
+ T
C
P
DM
t
1
t
2
0.1
0.05
0.02
0.01
0.2
0.5
SINGLE PULSE
IRF630, RF1S630SM
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| RF1S630SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S640 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S640SM | 功能描述:MOSFET N-Ch Power MOSFET 200V/18a/0.180 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S640SM9A | 功能描述:MOSFET USE 512-FQP19N20C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S644 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-262AA |
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