參數(shù)資料
型號(hào): RF1K49223
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
中文描述: 2.5 A, 30 V, 0.36 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 97K
代理商: RF1K49223
8-165
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
1.2
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= -250
μ
A
750
600
300
0
0
-5
-10
-15
-20
-25
C
450
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
150
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
R
L
= 12
I
G(REF)
= -0.26mA
V
GS
= -10V
-30.0
-22.5
-15.0
-7.5
0
20
)
)
---------------------
t, TIME (
μ
s)
80
)
)
---------------------
-10.0
-7.5
-5.0
-2.5
0
V
D
,
V
G
,
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
GS
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1K49223
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