- 您現(xiàn)在的位置：買賣IC網 > PDF目錄374582 > RF1K49223 (HARRIS SEMICONDUCTOR) 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET PDF資料下載
參數資料
| 型號： | RF1K49223 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 2.5 A, 30 V, 0.36 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 97K |
| 代理商： | RF1K49223 |
8-163
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
-1.5
-0.5
0
25
50
75
100
125
150
-1.0
-2.0
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
-3.0
-2.5
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
10
2
0.001
10
0.1
1
10
-2
10
3
Z
θ
J
,
T
0.01
10
-4
10
-3
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-1
-10
-100
-0.01
-1
-50
-10
-0.1
-0.1
I
D
,
DC
5ms
10ms
100ms
1s
V
DSS(MAX)
= -30V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
A
= 25
o
C
t, PULSE WIDTH (s)
-100
-10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= -10V
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
T
A
= 25
o
C
V
GS
= -20V
RF1K49223
相關PDF資料 |
PDF描述 |
|---|---|
| RF1K49223 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K4922396 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K49224 | 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET |
| RF1S22N10SM | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
| RFP22N10 | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF1K4922396 | 功能描述:MOSFET USE 512-FDS9953A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4922396R4617 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1K49224 | 制造商:Harris Corporation 功能描述: |
| RF1K4922496 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 3.5A I(D) | SO |
| RF1R-DC12V | 制造商:Panasonic Electric Works 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。