- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374582 > RF1K49223 (HARRIS SEMICONDUCTOR) 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | RF1K49223 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 2.5 A, 30 V, 0.36 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 97K |
| 代理商： | RF1K49223 |
8-164
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
-10
0.1
-15
-1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
-4
-8
-12
0
-1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-3.0
-4.5
-6.0
-7.5
-16
-20
I
D
,
V
GS
= -6V
V
GS
= -10V
V
GS
= -8V
V
GS
= -20V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
V
GS
= -5V
V
GS
= -4.5V
V
GS
= -7V
0
-4
-6
-8
-10
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
-4
-8
-12
-16
-20
I
D
,
150
o
C
V
DD
= -15V
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
100
200
300
400
500
0
-6
-4
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
-2
-8
-10
I
D
= -0.625A
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
I
D
= -1.25A
I
D
= -2.5A
I
D
= -5.0A
0
-80
0.5
1.0
1.5
2.0
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= -2.5A
-80
-40
0
40
80
120
160
0.4
0.6
0.8
1.0
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= -250
μ
A
RF1K49223
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1K49223 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K4922396 | 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K49224 | 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET |
| RF1S22N10SM | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
| RFP22N10 | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4922396 | 功能描述:MOSFET USE 512-FDS9953A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4922396R4617 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1K49224 | 制造商:Harris Corporation 功能描述: |
| RF1K4922496 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 3.5A I(D) | SO |
| RF1R-DC12V | 制造商:Panasonic Electric Works 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。