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參數(shù)資料
| 型號(hào)： | RF1K49090 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 252K |
| 代理商： | RF1K49090 |
2002 Fairchild Semiconductor Corporation
RF1K49090 Rev. B
Soldering Precautions
The soldering process creates a considerable thermal stress
on any semiconductor component. The melting temperature
of solder is higher than the maximum rated temperature of
the device. The amount of time the device is heated to a high
temperature should be minimized to assure device reliability.
Therefore, the following precautions should always be
observed in order to minimize the thermal stress to which the
devices are subjected.
1. Always preheat the device.
2. The delta temperature between the preheat and soldering
should always be less than 100
o
C. Failure to preheat the
device can result in excessive thermal stress which can
damage the device.
3. The maximum temperature gradient should be less than 5
o
C
per second when changing from preheating to soldering.
4. The peak temperature in the soldering process should be
at least 30
o
C higher than the melting point of the solder
chosen.
5. The maximum soldering temperature and time must not
exceed 260
o
C for 10 seconds on the leads and case of
the device.
6. After soldering is complete, the device should be allowed
to cool naturally for at least three minutes, as forced cool-
ing will increase the temperature gradient and may result
in latent failure due to mechanical stress.
7. During cooling, mechanical stress or shock should be
avoided.
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
FIGURE 20. GATE CHARGE TEST CIRCUIT
FIGURE 21. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
0.3
μ
F
12V
BATTERY
50k
V
DS
S
DUT
D
G
I
g(REF)
0
(ISOLATED
SUPPLY)
V
DS
0.2
μ
F
CURRENT
REGULATOR
I
D
CURRENT
SAMPLING
RESISTOR
I
G
CURRENT
SAMPLING
RESISTOR
SAME TYPE
AS DUT
V
DD
Q
g(TH)
V
GS
= 1V
0
Q
g(5)
V
GS
= 5V
Q
g(TOT)
V
GS
= 10V
V
DS
V
GS
I
g(REF)
0
RF1K49090
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1K49090 | Dual N-Channel power MOSFET(雙路N溝道功率MOS場(chǎng)效應(yīng)管) |
| RF1K4909296 | TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 12V V(BR)DSS | 3.5A I(D) | SO |
| RF1K49092 | 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET |
| RF1K49092 | Logic Level Complementary power MOSFET(邏輯電平可補(bǔ)償功率MOS場(chǎng)效應(yīng)管) |
| RF1K49093 | 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4909096 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49092 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4909296 | 功能描述:MOSFET USE 512-FDS9934C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49093 | 功能描述:MOSFET SOIC-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4909396 | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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