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參數(shù)資料
| 型號： | RF1K49090 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET⑩ Power MOSFET |
| 中文描述： | 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 252K |
| 代理商： | RF1K49090 |
2002 Fairchild Semiconductor Corporation
RF1K49090 Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
10
0.1
20
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
5
10
15
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
V
GS
= 3V
20
25
V
GS
= 4V
I
D
,
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
25
o
C
0
3.0
4.5
6.0
7.5
1.5
0
5
10
15
20
25
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 6V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
50
100
150
200
250
0
2.5
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
I
D
= 0.5A
I
D
= 7.0A
3.0
I
D
= 1.75A
I
D
= 3.5A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 10V
40
20
30
40
50
140
100
80
60
20
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
V
DD
= 6V, I
D
= 3.5A, R
L
= 1.71
t
r
t
D(OFF)
t
f
t
D(ON)
120
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
V
GS
= 5V, I
D
= 3.5A
RF1K49090
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