- 您現(xiàn)在的位置：買賣IC網 > PDF目錄374582 > RF1K49088 (HARRIS SEMICONDUCTOR) Dual N-Channel power MOSFET(雙路N溝道功率MOS場效應管) PDF資料下載
參數(shù)資料
| 型號： | RF1K49088 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel power MOSFET(雙路N溝道功率MOS場效應管) |
| 中文描述： | 3.5 A, 30 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 173K |
| 代理商： | RF1K49088 |
8-97
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
1
10
100
10
0.1
20
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
5
10
15
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
V
GS
= 3V
20
25
V
GS
= 4V
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 10V
T
A
= 25
C
0
3.0
4.5
6.0
7.5
1.5
0
5
10
15
20
25
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
150
o
C
50
100
150
200
250
0
2.5
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
I
D
= 1.75A
I
D
= 3.5A
I
D
= 0.5A
I
D
= 7.0A
3.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
40
20
30
40
50
120
100
80
60
20
0
10
R
GS
, GATE TO SOURCE RESISTANCE (
)
S
V
DD
= 15V, I
D
= 3.5A, R
L
= 4.29
t
r
t
D(OFF)
t
f
t
D(ON)
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
V
GS
= 5V, I
D
= 3.5A
RF1K49088
相關PDF資料 |
PDF描述 |
|---|---|
| RF1K49088 | 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET |
| RF1K4909096 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 12V V(BR)DSS | 3.5A I(D) | SO |
| RF1K49090 | 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET⑩ Power MOSFET |
| RF1K49090 | Dual N-Channel power MOSFET(雙路N溝道功率MOS場效應管) |
| RF1K4909296 | TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 12V V(BR)DSS | 3.5A I(D) | SO |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4908896 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO |
| RF1K49090 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4909096 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49092 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4909296 | 功能描述:MOSFET USE 512-FDS9934C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。