參數(shù)資料
型號: RD38F1010C0ZTL0
廠商: INTEL CORP
元件分類: 存儲器
英文描述: 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù): 69/70頁
文件大小: 1223K
代理商: RD38F1010C0ZTL0
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
69
AppendixHOrderingInformation
Table33. OrderingInformationfor0.25
μmand0.18μm
.
Table34. OrderingInformationforCombinationswith16M0.13μmFlash
R D 2 8 F 3 2 0 8 C 3 T 7 0
Package
RD=8x12BallMatrixCSP
ProductLineDesignator
forallIntelFlashproducts
FlashDensity
320=x16(32Mbit)
160=x16(16Mbit)
SRAMDeviceDensity
8=x16(8Mbit)
4=x16(4Mbit)
2=x16(2Mbit)
16Mbit=70,90,110
32Mbit=70,90
AccessSpeed(ns)
T
=TopBlocking
B
=BottomBlocking
ProductFamily
C3=3VAdvanced+BootBlock
V
CC
=2.7V-3.3V
V
PP
=1.65V-3.3Vor
11.4V-12.6V
R D 2 8 F 1 6 0 2 C 3 T D 7 0
Package
RD=Stacked-CSP
ProductLineDesignator
38F=IntelFlashStackedMemory
16Mbit=70ns
AccessSpeed(ns)
FlashDensity
320=x16(32Mbit)
160=x16(16Mbit)
SRAMDeviceDensity
4=x16(4Mbit)
2=x16(2Mbit)
ParameterLocation
T=TopBlocking
B=BottomBlocking
D=0.13μm
Technology
Differentiator
C=Advanced+BootBlock
FlashMemory
ProductFamily
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