參數(shù)資料
型號(hào)： RD28F3204C3B70
廠商： INTEL CORP
元件分類： 存儲(chǔ)器
英文描述： TVS BIDIRECT 400W 18V SMA
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù)： 41/70頁
文件大?。?/td> 1223K
代理商： RD28F3204C3B70
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
41
7.0
SystemDesignConsiderations
Thissectioncontainsinformationthatwouldhavebeencontainedinaproductdesignguidein
earliergenerations.Inanefforttosimplifytheamountofdocumentation,relevantsystemdesign
considerationshavebeencombinedintothisdocument.
7.1
Background
TheIntelAdvanced+BootBlockStackedchipscalepackagecombinesthefeaturesofthe
Advanced+BootBlockflashmemoryarchitecturewithalow-powerSRAMtoachieveanoverall
reductioninsystemboardspace.Thisenablesapplicationstointegratesecuritywithsimple
softwareandhardwareconfigurations,whilealsocombiningthesystemSRAMandflashintoone
commonfootprint.Thissectiondiscusseshowtotakefulladvantageofthe3VoltAdvanced+Boot
BlockStackedChipScalePackage.
7.1.1
Flash+SRAMFootprintIntegration
TheStackedChipScalePackagememorysolutioncanbeusedtoreplaceasubsetofthememory
subsystemwithinadesign.Whereapreviousdesignmayhaveusedtwoseparatefootprintsfor
SRAMandFlash,youcannowreplacewiththeindustry-standardI-balloutoftheStacked-CSP
device.Thisallowsforanoverallreductioninboardspace,whichallowsthedesigntointegrate
boththeflashandtheSRAMintoonecomponent.
7.1.2
Advanced+BootBlockFlashMemoryFeatures
Advanced+BootBlockaddsthefollowingnewfeaturestoIntelAdvancedBootBlock
architecture:
Instant,individualblocklockingprovidessoftware/hardwarecontrolled,independentlocking/
unlockingofanyblockwithzerolatencytoprotectcodeanddata.
A128-bitProtectionRegisterenablessystemsecurityimplementations.
Improved12 Vproductionprogrammingsimplifiesthesystemconfigurationrequiredto
implement12 Vfastprogramming.
CommonFlashInterface(CFI)providescomponentinformationonthechiptoallowsoftware-
independentdeviceupgrades.
FormoreinformationonspecificadvantagesoftheAdvanced+BootBlockFlashMemory,please
see
AP-658DesigningwiththeAdvanced+BootBlockFlashMemoryArchitecture
.
7.2
FlashControlConsiderations
Theflashdeviceisprotectedagainstaccidentalblockerasureorprogrammingduringpower
transitions.Powersupplysequencingisnotrequired,since
thedeviceisindifferentastowhich
powersupply,F-VPPorF-VCC,powers-upfirst.Exampleflashpowersupplyconfigurationsare
shownin
Figure12,“ExamplePowerSupplyConfigurations”onpage 42
.
相關(guān)PDF資料
PDF描述
RD28F1602C3B70 TVS 400W 20V UNIDIRECT SMA
RD28F1604C3B90 TVS UNI-DIR 9.0V 400W SMA
RD28F1602C3B90 TVS UNIDIRECT 400W 90V SMA
RD28F3208C3B90 TVS BIDIRECT 400W 90V SMA
RD28F3208C3T70 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RD28F3204C3T70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F3204W30B70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30B85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30T70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30T85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
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