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參數(shù)資料
| 型號： | RC5061M |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Current-Mode SMPS Controller |
| 中文描述： | SWITCHING CONTROLLER, 345 kHz SWITCHING FREQ-MAX, PDSO20 |
| 封裝： | SOIC-20 |
| 文件頁數(shù)： | 9/18頁 |
| 文件大?。?/td> | 135K |
| 代理商： | RC5061M |
PRODUCT SPECIFICATION
RC5061
REV. 1.0.0 7/6/00
9
Table 2. RC5061 Application Bill of Materials
(Components based on Worst Case Analysis
—
See Appendix for Details)
Notes:
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply
with Intel dI/dt requirements. L1 may be omitted if desired.
2. For 17.4A designs using the TO-220 MOSFETs, heatsinks with thermal resistance
using the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections,
refer to Applications Bulletins AB-8 and AB-15.
*Refer to Appendix for values.
Θ
SA
< 20
°
C/W should be used. For designs
Reference
C1
Manufacturer Part #
AVX
TAJB475M010R5
Panasonic
ECU-V1C105ZFX
Panasonic
ECU-V1H104ZFX
Sanyo
6MV1000FA
Any
Sanyo
10MV1200GX
Sanyo
6MV1500GX
Motorola
MBRD835L
Any
Quantity
1
Description
4.7μF, 10V Capacitor
Requirements/Comments
C2, C5
2
1μF, 16V Capacitor
C3-4,C6
3
100nF, 50V Capacitor
C8-9
2
1000μF, 6.3V Electrolytic
C10-11
C
IN
2
*
22μF, 6.3V Capacitor
1200μF, 10V Electrolytic
Low ESR
I
RMS
= 2A
C
OUT
*
1500μF, 6.3V Electrolytic
ESR
≤
44m
D1
1
8A Schottky Diode
L1
Optional
2.5μH, 8A Inductor
DCR ~ 10m
See Note 1.
DCR ~ 2m
R
DS(ON)
= 20m
@
V
GS
= 4.5V See Note 2.
R
DS(ON)
= 10m
@
V
GS
= 4.5V See Note 2.
L2
Q1
Any
Fairchild
FDB6030L
Fairchild
FDB7030BL
Fairchild
FDB4030L
Any
Any
Any
Any
Any
Fairchild
RC5061M
1
1
1.3μH, 20A Inductor
N-Channel MOSFET
Q2
1
N-Channel MOSFET
Q3-4
2
N-Channel MOSFET
R1
R2-3
R4
R6
R7
U1
1
2
1
1
1
1
33
4.7
10K
10
*
DC/DC Controller
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