參數(shù)資料
型號(hào): RA07M3340M-E01
廠商: Mitsubishi Electric Corporation
英文描述: MITSUBISHI RF MOSFET MODULE
中文描述: 三菱射頻MOSFET模塊
文件頁(yè)數(shù): 4/9頁(yè)
文件大小: 67K
代理商: RA07M3340M-E01
MITSUBISHI RF POWER MODULE
R A 0 7 M 3 3 4 0 M
RA07M3340M
MITSUBISHI ELECTRIC
4/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
f=380MHz,
V
GG
=3.5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
f=400MHz,
V
GG
=3.5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
f=330MHz,
V
DD
=7.2V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
f=380MHz,
V
DD
=7.2V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
0
2
4
6
8
10
2
2.5
GATE VOLTAGE V
GG
(V)
3
3.5
4
O
o
(
0
1
2
3
4
5
6
D
D
(
P
out
I
DD
0
2
4
6
8
10
12
14
2
3
4
5
6
7
8
9
10
DRAIN VOLTAGE V
DD
(V)
O
o
(
0
2
4
6
8
D
D
(
P
out
I
DD
0
2
4
6
8
10
2
2.5
GATE VOLTAGE V
GG
(V)
3
3.5
4
O
o
(
0
1
2
3
4
5
6
D
D
(
P
out
I
DD
f=350MHz,
V
DD
=7.2V,
P
in
=50mW
0
2
4
6
8
10
2
2.5
GATE VOLTAGE V
GG
(V)
3
3.5
4
O
o
(
0
1
2
3
4
5
6
D
D
(
P
out
I
DD
0
2
4
6
8
10
12
14
2
3
4
5
6
7
8
9
10
DRAIN VOLTAGE V
DD
(V)
O
o
(
0
2
4
6
8
D
D
(
P
out
I
DD
0
2
4
6
8
10
2
2.5
GATE VOLTAGE V
GG
(V)
3
3.5
4
O
o
(
0
1
2
3
4
5
6
D
D
(
P
out
I
DD
f=400MHz,
V
DD
=7.2V,
P
in
=50mW
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
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