參數資料
型號: RA07M3340M-01
廠商: Mitsubishi Electric Corporation
英文描述: MITSUBISHI RF MOSFET MODULE
中文描述: 三菱射頻MOSFET模塊
文件頁數: 1/9頁
文件大小: 67K
代理商: RA07M3340M-01
MITSUBISHI RF MOSFET MODULE
R A 0 7 M3 3 4 0 M
330-400MHz
7W
7.2V, 2Stage Amp. For PORTABLE RADIO
RA07M3340M
MITSUBISHI ELECTRIC
1/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA07M3340M is a 7-watt RF MOSFET Amplifier Module
for 7.2-volt portable radios that operate in the 330- to 400-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=7.2V, V
GG
=0V)
P
out
>7W @ V
DD
=7.2V, V
GG
=3.5V, P
in
=50mW
η
T
>40% @ P
out
=6.5W (V
GG
control), V
DD
=7.2V, P
in
=50mW
Broadband Frequency Range: 330-400MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
Module Size: 30 x 10 x 5.4 mm
Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA07M3340M-E01
RA07M3340M-01
(Japan - packed without desiccator)
Antistatic tray,
25 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
PACKAGE CODE: H46S
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