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參數(shù)資料
| 型號(hào)： | RA07M3340M-E01 |
| 廠(chǎng)商： | Mitsubishi Electric Corporation |
| 英文描述： | MITSUBISHI RF MOSFET MODULE |
| 中文描述： | 三菱射頻MOSFET模塊 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 67K |
| 代理商： | RA07M3340M-E01 |
MITSUBISHI RF POWER MODULE
R A 0 7 M 3 3 4 0 M
RA07M3340M
MITSUBISHI ELECTRIC
2/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
V
DD
Drain Voltage
V
GG
<3.5V
9.2
V
V
GG
Gate Voltage
V
DD
<7.2V, P
in
=0mW
4
V
P
in
Input Power
70
mW
P
out
Output Power
f=330-400MHz,
Z
G
=Z
L
=50
10
W
T
case(OP)
Operation Case Temperature Range
-30 to +90
°C
T
stg
Storage Temperature Range
The above parameters are independently guaranteed.
-40 to +110
°C
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
330
400
MHz
P
out
Output Power
V
DD
=7.2V,V
GG
=3.5V, P
in
=50mW
7
W
η
T
Total Efficiency
2
nd
Harmonic
40
%
2f
o
-25
dBc
ρ
in
Input VSWR
4:1
—
I
GG
Gate Current
P
out
=6.5W (V
GG
control),
V
DD
=7.2V,
P
in
=50mW
1
mA
—
Stability
V
DD
=4.0-9.2V, P
in
=25-70mW, P
out
<8W (V
GG
control),
Load VSWR=4:1
No parasitic oscillation
—
—
Load VSWR Tolerance
V
DD
=9.2V, P
in
=50mW, P
out
=7.0W (V
GG
control),
Load VSWR=20:1
No degradation or
destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
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