參數(shù)資料
型號(hào): R5F562N8ADLE#U0
廠商: Renesas Electronics America
文件頁數(shù): 124/148頁
文件大?。?/td> 0K
描述: MCU 32BIT FLASH 512KROM 145TFLGA
產(chǎn)品培訓(xùn)模塊: RX Compare Match Timer
RX DMAC
標(biāo)準(zhǔn)包裝: 1
系列: RX600
核心處理器: RX
芯體尺寸: 32-位
速度: 100MHz
連通性: EBI/EMI,I²C,SCI,SPI,USB
外圍設(shè)備: DMA,LVD,POR,PWM,WDT
輸入/輸出數(shù): 103
程序存儲(chǔ)器容量: 512KB(512K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 96K x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10/12b,D/A 2x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 145-TFLGA
包裝: 托盤
2004 Microchip Technology Inc.
DS39609B-page 75
PIC18F6520/8520/6620/8620/6720/8720
6.2.3
16-BIT BYTE SELECT MODE
Figure 6-3 shows an example of 16-bit Byte Select
mode for PIC18F8X20 devices. This mode allows table
write operations to word-wide external memories with
byte selection capability. This generally includes both
word-wide Flash and SRAM devices.
During a TBLWT cycle, the TABLAT data is presented
on the upper and lower byte of the AD15:AD0 bus. The
WRH signal is strobed for each write cycle; the WRL
pin is not used. The BA0 or UB/LB signals are used to
select the byte to be written, based on the Least
Significant bit of the TBLPTR register.
Flash and SRAM devices use different control signal
combinations to implement Byte Select mode. JEDEC
standard Flash memories require that a controller I/O
port pin be connected to the memory’s BYTE/WORD
pin to provide the select signal. They also use the BA0
signal from the controller as a byte address. JEDEC
standard static RAM memories, on the other hand, use
the UB or LB signals to select the byte.
FIGURE 6-3:
16-BIT BYTE SELECT MODE EXAMPLE
AD<7:0>
PIC18F8X20
AD<15:8>
ALE
373
A<20:1>
373
OE
WRH
A<19:16>
WRL
BA0
JEDEC Word
A<x:1>
D<15:0>
A<20:1>
CE
D<15:0>
I/O
OE WR(1)
A0
BYTE/WORD
Flash Memory
JEDEC Word
A<x:1>
D<15:0>
CE
D<15:0>
OE
WR(1)
LB
UB
SRAM Memory
LB
UB
138
Address Bus
Data Bus
Control Lines
Note 1:
This signal only applies to table writes. See Section 5.1 “Table Reads and Table Writes”.
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