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參數(shù)資料
| 型號： | QSB363C.ZR |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 471K |
| 代理商： | QSB363C.ZR |
4
www.fairchildsemi.com
QSB363C Rev. 1.0.2
QSB363C
Subminiature
Plastic
Silicon
Infrared
Phototransistor
Package Dimensions
Features
■ Three lead forming options: Gull Wing, Yoke and Z-Bend
■ Compatible with automatic placement equipment
■ Supplied on tape and reel or in bulk packaging
■ Compatible with vapor phase reow solder processes
Gull Wing Lead Conguration
Z-Bend Lead Conguration
0.098
±0.004
(2.5
±0.1)
0.157
±0.008
(4.0
±0.2)
0.043
±0.008
(1.1
±0.2)
0.055
±0.008
(1.4
±0.2)
0.012
±0.004
(0.3
±0.1)
0.029
±0.004
(0.75
±0.1)
R0.031
±.004
(0.8
±0.1)
(0.83
)
+0.13
–0
0.032
+0.005
–0
Polarity
+
–
C
L
C L
0.020
±
0.004
(0.5
±
0.1)
0.006
±
0.002
(0.15
±
0.05)
0.016
±
0.004
(0.4
±
0.1)
0.079
±
0.008
(2.0
±
0.2)
0.106
±
0.008
(2.7
±
0.2)
0.055
±0.004
(1.4
±0.1)
0.051
±0.004
(1.3
±0.1)
0.025
±
0.004
(0.65
±
0.1)
0.075
±0.008
(1.9
±0.2)
Cathode
(0.6
)
+0.13
–0
0.023
+0.005
–0
0.098
±0.004
(2.5
±0.1)
0.043
±0.008
(1.1
±0.2)
0.055
±0.008
(1.4
±0.2)
0.12
±0.008
(3.05
±0.2)
0.169
±0.008 (4.3±0.2)
0.228
±0.008 (5.8±0.2)
0.029
±0.004
(0.75
±0.1)
R0.031
±.004
(0.8
±0.1)
Polarity
+
–
C
L
C L
0.020
±
0.004
(0.5
±
0.1)
0.006
±
0.002
(0.15
±
0.05)
0.016
±
0.004
(0.4
±
0.1)
0.079
±
0.008
(2.0
±
0.2)
0.106
±
0.008
(2.7
±
0.2)
0.055
±0.004
(1.4
±0.1)
0.051
±0.004
(1.3
±0.1)
0.025
±
0.004
(0.65
±
0.1)
0.075
±0.008
(1.9
±0.2)
Cathode
Yoke Lead Conguration
0.098
±0.004
(2.5
±0.1)
0.043
±0.008
(1.1
±0.2)
0.055
±0.008
(1.4
±0.2)
0.185
±0.008 (4.7±0.2)
0.291
±0.008 (7.4±0.2)
0.029
±0.004
(0.75
±0.1)
R0.031
±.004
(0.8
±0.1)
R0.016
±.004
(0.4
±0.1)
Polarity
+
–
C
L
C L
0.020
±
0.004
(0.5
±
0.1)
0.006
±
0.002
(0.15
±
0.05)
0.016
±
0.004
(0.4
±
0.1)
0.079
±
0.008
(2.0
±
0.2)
0.106
±
0.008
(2.7
±
0.2)
0.055
±0.004
(1.4
±0.1)
0.051
±0.004
(1.3
±0.1)
0.025
±
0.004
(0.65
±
0.1)
0.075
±0.008
(1.9
±0.2)
Cathode
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| QSB363GR | 功能描述:光電晶體管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB363YR | 功能描述:光電晶體管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB363ZR | 功能描述:光電晶體管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB373ZR | 功能描述:光電晶體管 T-3- 4 PHOTO XSTR DETECTOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB-40-01 | 功能描述:風扇電線及配件 40mm EMI FILTR SHLD RoHS:否 制造商:ebm-papst 類型:Finger Guard 適合風扇大小:120 mm 系列: |
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