- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299802 > QSB363C.ZR (FAIRCHILD SEMICONDUCTOR CORP) PHOTO TRANSISTOR DETECTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | QSB363C.ZR |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 471K |
| 代理商： | QSB363C.ZR |
2
www.fairchildsemi.com
QSB363C Rev. 1.0.2
QSB363C
Subminiature
Plastic
Silicon
Infrared
Phototransistor
Absolute Maximum Ratings (TA = 25°C unless otherwise specied)
Notes
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100 s, T = 10 ms.
5. D = 940 nm, GaAs.
Electrical/Optical Characteristics (TA =25°C)
Parameter
Symbol
Rating
Unit
Operating Temperature
TOPR
-25 to +85
°C
Storage Temperature
TSTG
-40 to +85
°C
Soldering Temperature (Iron)(2,3,4)
TSOL
260
°C
Soldering Temperature (Flow)(2,3)
TSOL
260
°C
Collector Emitter Voltage
VCEO
30
V
Emitter Collector Voltage
VECO
5V
Power Dissipation(1)
PC
75
mW
Parameters
Test Conditions
Symbol
Min.
Typ.
Max
Units
Peak Sensitivity Wavelength
λP
—
940
—
nm
Reception Angle
Θ
—
±12
—
Collector Dark Current
VCE = 20V, Ee = 0mW/cm
2
ICEO
——
100
nA
Collector-Emitter Breakdown Voltage
IC = 100 A, Ee = 0mW/cm
2
BVCEO
30
—
V
Emitter-Collector Breakdown Voltage
IE = 100 A, Ee = 0mW/cm
2
BVECO
5—
—
V
On-State Collector Current
VCE = 5V
Ee = 0.5 mW/cm2
IC(on)
1.0
1.5
—
mA
Collector-Emitter Saturation Voltage
IC = 2 mA
Ee = 1 mW/cm2
VCE (SAT)
——
0.4
V
Rise Time
Fall Time
VCE = 5 V,
IC = 1 mA
RL = 1000
tr
tf
—
15
—
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QSB363C.GR | PHOTO TRANSISTOR DETECTOR |
| QSD723_0163 | PHOTO TRANSISTOR DETECTOR |
| QSE123 | PHOTO TRANSISTOR DETECTOR |
| QSE213C | Plastic Silicon Infrared Phototransistor |
| QSE214C | Plastic Silicon Infrared Phototransistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSB363GR | 功能描述:光電晶體管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB363YR | 功能描述:光電晶體管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB363ZR | 功能描述:光電晶體管 Phototransistor Si Infrared RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB373ZR | 功能描述:光電晶體管 T-3- 4 PHOTO XSTR DETECTOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSB-40-01 | 功能描述:風(fēng)扇電線及配件 40mm EMI FILTR SHLD RoHS:否 制造商:ebm-papst 類型:Finger Guard 適合風(fēng)扇大小:120 mm 系列: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。