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參數(shù)資料
| 型號(hào)： | PZTM1102 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; Number of Contacts:8; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | 0.2 A, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | PZTM1102 |
1996 May 09
3
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PZTM1102
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
V
(BR)CBO
collector-base breakdown
voltage
collector-emitter
breakdown voltage
emitter-base breakdown
voltage
collector-emitter cut-off
current
open emitter; I
C
=
10
μ
A; I
E
= 0;
T
amb
=
55 to +150
°
C; note 1
open base; I
C
=
1 mA; V
BE
= 0;
T
amb
=
55 to +150
°
C; note 1
open collector; I
E
=
10
μ
A; I
C
= 0;
T
amb
=
55 to +150
°
C; note 1
V
CE
=
20 V; V
BE
= 0
V
CE
=
20 V; V
BE
= 0; T
amb
=
55 to +150
°
C
V
EB
=
6 V; I
C
= 0
V
EB
=
6 V; I
C
= 0; T
amb
=
55 to +150
°
C
note 1
I
C
=
10 mA; I
B
=
1 mA
I
C
=
50 mA; I
B
=
3.2 mA
T
amb
=
55 to +150
°
C; note 1
I
C
=
10 mA; I
B
=
1 mA
I
C
=
50 mA; I
B
=
3.2 mA
note 1
I
C
=
10 mA; I
B
=
1 mA
I
C
=
50 mA; I
B
=
5 mA
T
amb
=
55 to +150
°
C; note 1
I
C
=
10 mA; I
B
=
1 mA
I
C
=
50 mA; I
B
=
5 mA
I
E
= i
e
= 0; V
CB
=
5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
0.5 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
20 V; f = 100 MHz
V
CE
=
1 V; note 1
I
C
=
0.1 mA
I
C
=
1 mA
I
C
=
10 mA
I
C
=
100 mA
V
CE
=
1 V; T
amb
=
55 to +150
°
C; note 1
I
C
=
10 mA
I
C
=
100 mA
40
V
V
(BR)CES
40
V
V
(BR)EBO
6
V
I
CES
100
50
50
10
nA
μ
A
nA
μ
A
I
EBO
emitter-base cut-off current
V
CEsat
collector-emitter saturation
voltage
200
300
mV
mV
V
CEsat
collector-emitter saturation
voltage
250
350
mV
mV
V
BEsat
base-emitter saturation
voltage
850
950
mV
mV
V
BEsat
base-emitter saturation
voltage
250
1.0
1.1
4.5
10
V
V
pF
pF
MHz
C
ob
C
ib
f
T
h
FE
output capacitance
input capacitance
transition frequency
DC current gain
40
70
100
30
300
h
FE
DC current gain
60
15
500
S
WITCHING TIMES
(see Figs 2 and 3)
t
d
t
r
t
s
t
f
delay time
rise time
storage time
fall time
V
CC
= 5 V
I
C
= 50 mA
V
i
= 0 to 5 V
3
13
200
50
7
23
380
80
ns
ns
ns
ns
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| PZTM1102,135 | 功能描述:兩極晶體管 - BJT TRANS/SCHOTTKY MODULE TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZTM1102T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200MA I(C) | SOT-223 |
| PZU10B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Single Zener diodes in a SOD323F package |
| PZU10B T/R | 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| PZU10B,115 | 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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