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參數(shù)資料
| 型號： | PZTM1102 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; Number of Contacts:8; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | 0.2 A, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 64K |
| 代理商： | PZTM1102 |
1996 May 09
2
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PZTM1102
FEATURES
Low output capacitance
Fast switching time
Integrated Schottky protection
diode.
APPLICATIONS
High-speed switching for industrial
applications.
DESCRIPTION
Combination of a PNP transistor and a Schottky barrier diode in a plastic
SOT223 package. NPN complement: PZTM1101.
PINNING
PIN
DESCRIPTION
1
2
3
4
cathode Schottky
base
emitter
collector, anode Schottky
Fig.1 Simplified outline (SOT223) and symbol.
Marking code:
TM1102.
handbook, halfpage
4
1
1
4
2
3
2
3
MAM237
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
An additional copper area of >20 mm
2
is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
It is not allowed to dissipate the total power of 1.2 W in the Schottky die only.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PNP transistor
V
CBO
V
CES
V
EBO
I
C
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
open emitter
V
BE
= 0
open collector
40
40
6
200
V
V
V
mA
Schottky barrier diode
V
R
I
F
I
F(AV)
P
T
j
continuous reverse voltage
forward current (DC)
average forward current
power dissipation
junction temperature
40
1
1
0.5
125
150
V
A
A
W
°
C
°
C
up to T
amb
= 25
°
C; note 1
reverse current applied
forward current applied
Combined device
P
tot
T
amb
T
stg
T
j
total power dissipation
operating ambient temperature
storage temperature
junction temperature
up to T
amb
= 25
°
C; note 2
55
55
1.2
+150
+150
150
W
°
C
°
C
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZTM1102,135 | 功能描述:兩極晶體管 - BJT TRANS/SCHOTTKY MODULE TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZTM1102T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200MA I(C) | SOT-223 |
| PZU10B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Single Zener diodes in a SOD323F package |
| PZU10B T/R | 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| PZU10B,115 | 功能描述:穩(wěn)壓二極管 ZENER DIODE RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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