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參數資料
| 型號： | PZT2907AT3 |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-261AA |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 600毫安一（c）|至261AA |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 58K |
| 代理商： | PZT2907AT3 |
PZT2907AT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(2)
DC Current Gain
(I
C
= –0.1 mAdc, V
CE
= –10 Vdc)
(I
C
= –1.0 mAdc, V
CE
= –10 Vdc)
(I
C
= –10 mAdc, V
CE
= –10 Vdc)
(I
C
= –150 mAdc, V
CE
= –10 Vdc)
(I
C
= –500 mAdc, V
CE
= –10 Vdc)
h
FE
75
100
100
100
50
—
—
—
—
—
—
—
—
300
—
—
Collector-Emitter Saturation Voltages
(I
C
= –150 mAdc, I
B
= –15 mAdc)
(I
C
= –500 mAdc, I
B
= –50 mAdc)
V
CE(sat)
—
—
—
—
–0.4
–1.6
Vdc
Base-Emitter Saturation Voltages
(I
C
= –150 mAdc, I
B
= –15 mAdc)
(I
C
= –500 mAdc, I
B
= –50 mAdc)
V
BE(sat)
—
—
—
—
–1.3
–2.6
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (I
C
= –50 mAdc, V
CE
= –20 Vdc, f = 100 MHz)
f
T
200
—
—
MHz
Output Capacitance (V
CB
= –10 Vdc, I
E
= 0, f = 1.0 MHz)
C
c
—
—
8.0
pF
Input Capacitance (V
EB
= –2.0 Vdc, I
C
= 0, f = 1.0 MHz)
SWITCHING TIMES
C
e
—
—
30
pF
Turn-On Time
(V
CC
= –30 Vdc, I
C
= –150 mAdc,
I
B1
= –15 mAdc)
t
on
—
—
45
ns
Delay Time
t
d
—
—
10
Rise Time
t
r
—
—
40
Turn-Off Time
(V
CC
= –6.0 Vdc, I
C
= –150 mAdc,
I
B1
= I
B2
= –15 mAdc)
6 0 Vd
t
off
—
—
100
ns
Storage Time
t
s
—
—
80
Fall Time
t
f
—
—
30
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle = 2.0%.
Figure 1. Delay and Rise
Time Test Circuit
Figure 2. Storage and Fall
Time Test Circuit
INPUT
Z
o
= 50
PRF = 150 Hz
RISE TIME
≤
2.0 ns
0
1.0 k
50
-16 V
200 ns
-30 V
200
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
0
1.0 k
50
-30 V
200 ns
-6.0 V
37
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
+15 V
1.0 k
1N916
INPUT
Z
o
= 50
PRF = 150 Hz
RISE TIME
≤
2.0 ns
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