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參數(shù)資料
| 型號： | PZT751T3 |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-261AA |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 60V的五（巴西）總裁|甲一（c）|至261AA |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 54K |
| 代理商： | PZT751T3 |
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT–223 package which is designed for medium power surface
mount applications.
High Current: 2.0 Amp
The SOT–223 Package can be soldered using wave or reflow.
SOT–223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
Available in 12 mm Tape and Reel
Use PZT751T1 to order the 7 inch/1000 unit reel.
Use PZT751T3 to order the 13 inch/4000 unit reel.
NPN Complement is PZT651T1
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
60
Vdc
Collector–Base Voltage
V
CBO
80
Vdc
Emitter–Base Voltage
V
EBO
5.0
Vdc
Collector Current
I
C
2.0
Adc
Total Power Dissipation @ T
A
= 25
°
C
(1)
Derate above 25
°
C
P
D
0.8
6.4
Watts
mW/
°
C
Storage Temperature Range
T
stg
–65 to 150
°
C
Junction Temperature
T
J
150
°
C
DEVICE MARKING
ZT751
THERMAL CHARACTERISTICS
Thermal Resistance from Junction–to–Ambient in Free Air
R
θ
JA
156
°
C/W
Maximum Temperature for Soldering Purposes
Time in Solder Bath
T
L
260
10
°
C
Sec
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
PZT751T1/D
PZT751T1
SOT–223 PACKAGE
HIGH CURRENT
PNP SILICON
TRANSISTOR
SURFACE MOUNT
ON Semiconductor Preferred Device
CASE 318E-11, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR 2, 4
BASE
1
EMITTER 3
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PDF描述 |
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| PZTA55 | PNP General Purpose Amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT772 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Epitaxial Planar Transistor |
| PZT882 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Epitaxial Planar Transistor |
| PZT949 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Silicon Planar High Current Gain Transistor |
| PZT951 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:PNP Silicon Planar High Current Transistor |
| PZT965 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Epitaxial Planar Transistor |
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