參數(shù)資料
型號： PZT2222AT3
英文描述： TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | SOT-223
中文描述： 晶體管|晶體管|叩| 40V的五（巴西）總裁| 600毫安一（c）|的SOT - 223
文件頁數(shù)： 2/6頁
文件大小： 170K
代理商： PZT2222AT3
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS — continued
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (continued)
Collector-Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125
°
C)
ICBO
—
—
10
10
nAdc
μ
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = – 55
°
C)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
35
50
70
35
100
50
40
—
—
—
—
300
—
—
—
Collector-Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
—
0.3
1.0
Vdc
Base-Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Input Impedance
°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
VBE(sat)
0.6
—
1.2
2.0
Vdc
°
hie
°
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
—
—
8.0x10-4
4.0x10-4
—
Small-Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Output Admittance
°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Noise Figure (VCE = 10 Vdc, IC = 100
μ
Adc, f = 1.0 kHz)
hfe
50
75
300
375
—
°
hoe
°
5.0
25
35
200
μ
mhos
F
—
4.0
dB
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
300
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cc
—
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ce
—
25
pF
SWITCHING TIMES
(TA = 25
°
C)
Delay Time
(VCC = 30 Vdc, IC = 150 mAdc,
Figure 1
td
—
10
ns
Rise Time
IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)
tr
—
25
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
Figure 2
ts
—
225
ns
Fall Time
IB(on) = IB(off) = 15 mAdc)
tf
—
60
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