參數(shù)資料
型號(hào)： PZB16035U
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN microwave power transistor
中文描述： L BAND, Si, NPN, RF POWER TRANSISTOR
封裝： METAL, CERAMIC PACKAGE-2
文件頁數(shù)： 4/12頁
文件大?。?/td> 67K
代理商： PZB16035U
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common base class B selective amplifier; note 1.
Note
1.
Amplifier consists of pre-matching test-circuit with complementary input and output slug tuners.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 75
°
C
T
j
= 75
°
C; note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
2.2
0.2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 40 V; I
E
= 0
V
CB
= 30 V; I
E
= 0
V
CER
= 35 V; R
BE
= 0
V
EB
= 1.5 V; I
C
= 0
V
CB
= 28 V; I
E
= I
C
= 0
17
10
5
50
200
mA
mA
mA
μ
A
pF
I
CES
I
EBO
C
cb
collector cut-off current
emitter cut-off current
collector-base capacitance
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Z
i
; Z
L
(
)
Class B (CW)
1.55
28
>35; typ. 38
>8; typ. 9.8
>45; typ. 50
see Figs 5 and 6
Fig.3 Prematching test circuit boards for CW, class B operation at 1.55 GHz.
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.65 mm.
Permittivity:
ε
r
= 10.
handbook, full pagewidth
MGK062
100 pF
(ATC)
output
50
input
50
6
0.65
4
9
6
6
0.65
3
9
5.5
6.5
6
14
14
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