參數(shù)資料
型號： PSMN038
廠商： NXP Semiconductors N.V.
英文描述： N-channel enhancement mode field-effect transistor
中文描述： N溝道增強型場效應(yīng)管
文件頁數(shù)： 7/13頁
文件大?。?/td> 271K
代理商： PSMN038
Philips Semiconductors
PSMN038-100K
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 16 January 2001
7 of 13
9397 750 07897
Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
Tj (oC)
180
VGS(th)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
0
1
2
3
4
5
max
typ
min
VGS (V)
ID
(A)
03ae01
0
10
20
30
40
0
10
20
30
40
50
I
D
(A)
g
fs
(S)
T
j
= 25 oC
150 oC
V
DS
> I
D
X R
DSon
03ae03
102
103
104
10-1
1
10
102
V
DS
(V)
C
iss
,
C
oss
,
C
rss
(pF)
C
iss
C
oss
C
rss
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN038-100K 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET
PSMN038-100K /T3 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN038-100K,518 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN038-100YLX 制造商:NXP Semiconductors 功能描述:PSMN038-100YL/LFPAK/REEL7// - Tape and Reel 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 100V 6.3A SO8
PSMN039-100YS 制造商:NXP Semiconductors 功能描述:MOSFETN CH100V28.1ALFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,28.1A,LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,28.1A,LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):30.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:4 ;RoHS Compliant: Yes
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