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參數(shù)資料
| 型號： | PSMN038 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | N溝道增強型場效應(yīng)管 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 271K |
| 代理商： | PSMN038 |
Philips Semiconductors
PSMN038-100K
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 16 January 2001
5 of 13
9397 750 07897
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
55
°
C
V
DS
= 80 V; V
GS
= 0 V; T
j
= 25
°
C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 150
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 5.2 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
100
130
V
2
1.2
4
6
1
0.5
100
V
V
V
μ
A
mA
nA
I
DSS
drain-source leakage current
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
33
76
38
88
m
m
Dynamic characteristics
g
fs
forward transconductance
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 2.3 A; V
GS
= 0 V;
Figure 13
t
rr
reverse recovery time
Q
r
recovery charge
V
DS
= 15 V; I
D
= 6.3 A;
Figure 11
I
D
= 6.3 A; V
DD
= 50 V; V
GS
= 10 V;
Figure 14
20
43
6.5
16
1740
220
135
15
13
50
25
21.5
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 12
30
25
80
40
V
DD
= 50 V; I
D
= 1 A; V
GS
= 10 V; R
G
= 6
0.7
85
0.3
1.1
V
ns
μ
C
I
S
= 6.3 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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| PSMN038-100K | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET |
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| PSMN038-100K,518 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN038-100YLX | 制造商:NXP Semiconductors 功能描述:PSMN038-100YL/LFPAK/REEL7// - Tape and Reel 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 100V 6.3A SO8 |
| PSMN039-100YS | 制造商:NXP Semiconductors 功能描述:MOSFETN CH100V28.1ALFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,28.1A,LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,100V,28.1A,LFPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):30.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:4 ;RoHS Compliant: Yes |
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