參數(shù)資料
型號(hào)： PSMN004-36P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 36 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 6/13頁(yè)
文件大?。?/td> 294K
代理商： PSMN004-36P
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 19 November 2001
6 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
x R
DSON
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag45
0
20
40
60
80
0
0.2
0.4
0.6
0.8
1
V
DS
(V)
I
D
(A)
2.4 V
T
j
= 25 oC
V
GS
= 2 V
2.8 V
2.6 V
10 V
2.2 V
5 V
03ag47
0
20
40
60
80
-0.2
0.6
1.4
2.2
3
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DS(ON)
T
j
= 25 oC
175 oC
03ag46
0
0.002
0.004
0.006
0.008
0.01
0
20
40
60
80
I
D
(A)
R
DS(on)
(
)
V
GS
= 2.6V
T
j
= 25 oC
10 V
5 V
2.8 V
03aa27
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
T
j
(
o
C)
a
a
R
DSon 25 C
)
----------------------------
=
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN004-55W 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-55W,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-60B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET
PSMN004-60B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-60B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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